| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device isolation layer is provided to prevent a leakage current by maintaining a poly recess of a trench area to be similar to the interface of a silicon substrate for preventing damage on the upper side of a trench. CONSTITUTION: A gap-fill dielectric film(204) is deposited on a semiconductor substrate(200') with a trench area. Materials for removing steps are deposited on the semiconductor substrate with the gap-fill dielectric layer. The gap-fill dielectric layer and the materials for removing steps are partially removed by performing an etch back process two or more times. The materials for removing the steps are filled in the trench area of the semiconductor substrate. A device isolation layer is formed on the semiconductor substrate by the etch back process.
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