发明名称 SCR ESD PROTECTION CIRCUIT
摘要 PURPOSE: An SCR electrostatic discharge protection circuit is provided to obtain a low operation voltage property and a sufficient ESD withstand voltage. CONSTITUTION: An NMOSFET is connected between an anode and a cathode. A first npn transistor(N1) is connected to the NMOSFET. A resistor(Rnw) is connected to the anode. The base of a pnp transistor(P1) is connected to the resistor of the base. The collector of second and third npn transistors(N2,N3) is connected to the resistor.
申请公布号 KR20110077920(A) 申请公布日期 2011.07.07
申请号 KR20090134600 申请日期 2009.12.30
申请人 DONGBU HITEK CO., LTD. 发明人 PARK, JAE YOUNG;SONG, JONG KYU
分类号 H01L27/04 主分类号 H01L27/04
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