发明名称 |
SCR ESD PROTECTION CIRCUIT |
摘要 |
PURPOSE: An SCR electrostatic discharge protection circuit is provided to obtain a low operation voltage property and a sufficient ESD withstand voltage. CONSTITUTION: An NMOSFET is connected between an anode and a cathode. A first npn transistor(N1) is connected to the NMOSFET. A resistor(Rnw) is connected to the anode. The base of a pnp transistor(P1) is connected to the resistor of the base. The collector of second and third npn transistors(N2,N3) is connected to the resistor.
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申请公布号 |
KR20110077920(A) |
申请公布日期 |
2011.07.07 |
申请号 |
KR20090134600 |
申请日期 |
2009.12.30 |
申请人 |
DONGBU HITEK CO., LTD. |
发明人 |
PARK, JAE YOUNG;SONG, JONG KYU |
分类号 |
H01L27/04 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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