| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor light-emitting element and a semiconductor laminated substrate, suppressing structural variations of a plurality of semiconductor light-emitting elements obtained from a single substrate. <P>SOLUTION: A protruding part formation region SA containing a protruding part and a flat surface and a mark formation region MA having an alignment mark M, are formed on one surface of a sapphire wafer WA by using a serial exposure method. Then, a semiconductor laminated substrate in which a group III nitride semiconductor layer is laminated on one surface of the sapphire wafer WA, is generated. Based on the reading result of formation position of mark M, an electrode structure corresponding to a plurality of semiconductor light emitting elements is formed by using a serial exposure method. <P>COPYRIGHT: (C)2011,JPO&INPIT |
