| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory device that prevents a write error when data are simultaneously written into all the memory cells selected by one word line. <P>SOLUTION: A memory cell array 1 is configured by arranging in matrix a plurality of memory cells storing data of two or more bits, and includes a plurality of bit lines and word lines connected to the memory cells. A voltage generation circuit 9 generates write voltage and step-up voltage for stepping up the write voltage. A control unit 7 writes data with a write voltage by adding the step-up voltage to the write voltage until the number of writing times reaches the first number of writing times is when data are written to all the memory cells connected to the selected word lines, and controls, when the first number of writing times is exceeded, whether to add the step-up voltage every time the data is written. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
