发明名称 APPARATUS FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide an apparatus for producing a silicon carbide single directly measurable of the temperature distribution of the crystal surface of an SiC single crystal. SOLUTION: The apparatus includes a water cooling tube 16 of a hollow cylindrical shape which is water-cooled by water circulation inside the wall part 16a; a fiberscope 17 which is arranged in a hollow part 16b of the water cooling tube 16, has an end part 17a having a fixed view angle arranged in a vessel 9 at a bottom part 9d side of the vessel 9 rather than a pedestal 10, takes-in light emitted from the pedestal 10 side to the bottom part 9d side of the vessel 9 from the end part 17a and transmits the light to the other end part 17c through an intermediate part 17b, and a thermoviewer 18 for visible light which directly measures the temperature distribution of the range according to the view angle by detecting the intensity of the light transmitted to the other end part 17c of the fiberscope 17. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011132084(A) 申请公布日期 2011.07.07
申请号 JP20090294337 申请日期 2009.12.25
申请人 DENSO CORP 发明人 MAKINO HIDEMI
分类号 C30B29/36 主分类号 C30B29/36
代理机构 代理人
主权项
地址