发明名称 |
METHOD OF MAKING A SEMICONDUCTOR STRUCTURE USEFUL IN MAKING A SPLIT GATE NON-VOLATILE MEMORY CELL |
摘要 |
A method of making a semiconductor device on a semiconductor layer is provided. The method includes: forming a select gate dielectric layer over the semiconductor layer; forming a select gate layer over the select gate dielectric layer; and forming a sidewall of the select gate layer by removing at least a portion of the select gate layer. The method further includes growing a sacrificial layer on at least a portion of the sidewall of the select gate layer and under at least a portion of the select gate layer and removing the sacrificial layer to expose a surface of the at least portion of the sidewall of the select gate layer and a surface of the semiconductor layer under the select gate layer. The method further includes forming a control gate dielectric layer, a charge storage layer, and a control gate layer.
|
申请公布号 |
US2011165749(A1) |
申请公布日期 |
2011.07.07 |
申请号 |
US20100683972 |
申请日期 |
2010.01.07 |
申请人 |
WINSTEAD BRIAN A;HONG CHEONG M;KANG SUNG-TAEG;LOIKO KONSTANTIN V;WILLIAMS SPENCER E |
发明人 |
WINSTEAD BRIAN A.;HONG CHEONG M.;KANG SUNG-TAEG;LOIKO KONSTANTIN V.;WILLIAMS SPENCER E. |
分类号 |
H01L21/336;H01L21/28 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|