发明名称 |
Schottky diode with low reverse leakage current and low forward voltage drop |
摘要 |
A Schottky diode structure with low reverse leakage current and low forward voltage drop has a first conductive material semiconductor substrate combined with a metal layer. An oxide layer is formed around the edge of the combined conductive material semiconductor substrate and the metal layer. A plurality of dot-shaped or line-shaped second conductive material regions are formed on the surface of the first conductive material semiconductor substrate connecting to the metal layer. The second conductive material regions form depletion regions in the first conductive material semiconductor substrate. The depletion regions can reduce the leakage current area of the Schottky diode, thereby reducing the reverse leakage current and the forward voltage drop. When the first conductive material is a P-type semiconductor, the second conductive material is an N-type semiconductor. When the first conductive material is an N-type semiconductor, the second conductive material is a P-type semiconductor.
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申请公布号 |
US2011163408(A1) |
申请公布日期 |
2011.07.07 |
申请号 |
US20100655698 |
申请日期 |
2010.01.06 |
申请人 |
PYNMAX TECHNOLOGY CO., LTD. |
发明人 |
TUNG CHIUN-YEN;CHEN KUN-HSIEN;WANG KAI-YING;WENG HUNG TA;SHEN YI-CHEN |
分类号 |
H01L29/872;H01L29/06 |
主分类号 |
H01L29/872 |
代理机构 |
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代理人 |
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地址 |
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