| 摘要 |
PROBLEM TO BE SOLVED: To provide an epitaxial growth device capable of effectively preventing an uneven gas flow rate of supplied raw gas within a substrate surface for epitaxial growth on the substrate to form a high quality epitaxial layer, and to provide a method of manufacturing the same. SOLUTION: The epitaxial growth device includes a gas feeder connected to a gas supplying source, a vertical gas flow channel in which the gas flows vertically, and a horizontal gas flow channel connected to the end of a downstream of the vetical gas flow channel and spouting the gas from the vertical gas flow channel in a horizontal direction to supply the gas to the substrate mounted on a susceptor. The vertical gas flow channel is a tree-shaped flow channel which branches to a plurality of flow channels toward the downstream. COPYRIGHT: (C)2011,JPO&INPIT |
