| 摘要 |
<p>PURPOSE: A method for manufacturing a trench MOSFET is provided to improve a UIS property without the change of a threshold voltage by freely controlling the impurity density of a first body and a second body. CONSTITUTION: Trench type gates are formed on a semiconductor substrate. A second conductive first body(315) is formed by implanting a second conductive impurity in the semiconductor substrate with trench type gates. A first conductive source region is formed on the surface of the semiconductor substrate adjacent to the trench type gate. An interlayer dielectric layer(330) is formed on the semiconductor substrate with the source region. A contact hole or trench is formed between adjacent trench gates by successively etching the interlayer dielectric layer and the semiconductor substrate. A second conductive second body(350) is formed by implanting the second conductive impurity in the surface of the semiconductor substrate exposed by the contact hole or trench.</p> |
