| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to reduce an on-resistance of an LDMOS by adding a mask for a first conductive well of a high voltage and a second conductive drain extension region. CONSTITUTION: A second conductive well of a high voltage is formed on a first conductive epitaxial layer. A first conductive well(125) of a high voltage is formed on the first conductive epitaxial layer to contact with one side of the second conductive well of the high voltage. A second conductive drain extension region is formed on the first conductive epitaxial layer to contact with other sides of the second conductive well of a high voltage. A first conductive body(135) is formed in the first conductive epitaxial layer to contact with the upper surface of the first conductive well of the high voltage and the second conductive drain extension region. A gate(150) is formed on one side of the first field oxide layer, the second conductive drain extension region, and the part of the first conductive body.</p> |
