| 摘要 |
<p>PURPOSE: An apparatus for chemical vapor deposition and a method using the same are provided to improve processing efficiency by forming a susceptor coating chamber and a susceptor baking chamber independently to perform a process of forming a thin film and a preparation process at the same time. CONSTITUTION: In an apparatus for chemical vapor deposition and a method using the same, a first pickup device(320) loads a substrate(W) to the top side of a susceptor. First to fourth actuators(331-334) load/unload a pallet to the inside of a reaction chamber or a buffer chamber. The first, the second, and the third and fourth make the pallet[pallet]through each reaction chamber or the buffer chamber inside the carry in and out. A first robot arm(340) grips the susceptor and puts it into the buffer chamber. The reaction chamber(100) includes a first reaction chamber(110), a second reaction chamber(120), a third reaction chamber(130), and a fourth reaction chamber(140). The buffer chamber(200) prevent the deterioration of the thin film due to sudden temperature change.</p> |
