| 摘要 |
<p>PURPOSE: A flash memory of having a 3-dimensional structure and a method of manufacturing the same are provided to implement high integration of a device by forming a plurality of stepped groups and efficiently performing a complex contact. CONSTITUTION: In a flash memory of having a 3-dimensional structure and a method of manufacturing the same, a cell region(300) comprises insulating layers(310,312,314,316) and electrode layers(321,323,325,327). The cell region comprises a multilayer plug(330) passing through the insulating layers and the electrode layers. A contact domain(400) comprises a plurality of stepped parts(430,440,450,460). A bit line wiring region(500) is included on the top of a cell region. The bit line wiring region is composed of a string select domain(510) and a bit line(530).</p> |
