METHOD OF FABRICATING A SEMICONDUCTOR DEVICE HAVING RECESS GATE STRUCTURE

摘要

PURPOSE: A method for manufacturing a semiconductor device with a recess gate structure is provided to suppress the extension of the upper side of a trench due to a cleaning process by doping impurities to induce the silicon-impurity combination on the surface of he device isolation layer before a trench etching process for forming a recess gate. CONSTITUTION: A trench device isolation layer(204) limiting an active area(206) is formed on a substrate(102). A hard mask layer pattern(310) is formed on the substrate. Impurities are doped on the surface of the trench device isolation layer to induce silicon-impurity combination. A trench is formed in the device isolation layer doped with the impurities and the active area. The substrate with the trench is cleaned.