| 摘要 |
<p>PURPOSE: A method for manufacturing a mask of a semiconductor device is provided to reduce mask manufacturing time and the runtime of optical proximity correction by minimizing the influence of a jog. CONSTITUTION: A design database is inputted to a mask manufacturing process(S51). A design rule of layout data of a semiconductor device is checked(S52). Jogs smaller than a reference value is removed from layout data(S53). The layout data without small jogs is optically proximity-corrected(S54). A mask pattern is formed by using the layout data which is optically proximity-corrected(S55).</p> |
