| 摘要 |
<p>PURPOSE: A method for manufacturing a flash memory device is provided to form a floating gate by single crystal silicon to form a floating gate which does not have a grain boundary, thereby enhancing the erase features of the memory device. CONSTITUTION: A tunnel oxide film(150) and a floating gate are formed on a semiconductor substrate. An ONO pattern and a control gate(330) are formed on a floating gate(310). An n-type ion is implanted into the floating gate. A second substrate(100) includes a device isolation film(110) and a well(120).</p> |
