| 摘要 |
PURPOSE: A semiconductor device is provided to obtain a uniform resistance value by connecting a top metal wiring to a bottom metal wiring through the other contact. CONSTITUTION: First metal wirings(212-218) are formed on a semiconductor substrate. A first insulation layer(210) is formed on the first metal wirings. A groove is formed by etching the first insulation layer. Thin film materials are formed on the first insulation layer to be filled in the groove. First via holes are formed to expose both sides of the thin film resistance materials filled in the groove and a part of the first metal wirings. First contacts are connected to both sides of the thin film resistance materials by filling metal materials in the first via holes. Second metal wirings(242-248) are formed on the first insulation layer with the first contacts.
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