| 摘要 |
PURPOSE: A method for manufacturing an image sensor is provided to reduce manufacturing time and costs by not requiring a photo mask. CONSTITUTION: A step is formed by forming an N well(110) and a P well(160) on the substrate. A first insulation layer is formed on the N well and the P well. A second insulation layer(130) is formed on the first insulation layer. A part of the side of the first insulation layer is exposed by etching the part of the second insulation layer. A field implant is performed by using the second insulation layer as a hard mask. A field oxide and a transistor are formed on the substrate.
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