SILICON SUBSTRATE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A silicon substrate and a manufacturing method thereof are provided to implement high gettering by increasing the density of a gattering site on the edge of a silicon substrate. CONSTITUTION: A silicon substrate(100) is formed by doping impurities of high density on an initial silicon substrate. An epi layer(130) is formed on the upper side of the silicon substrate. An oxygen extract(120A) is formed on the silicon substrate as the gattering site.