| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to implement high integration by decreasing the thickness of a multilayered wiring structure. CONSTITUTION: An STI(Shallow Trench Isolation)(110) is formed on a substrate(100). A metal part is formed by etching a trench pattern in an STI. A diffusion preventing layer is deposited on the metal part. A diffusion preventing layer forms an Al wiring by gap-filling Al on the STI with the diffusion preventing layer. A buffer layer is deposited on the Al wiring. A buffer layer part is removed on the part for forming an active area and the gate on the substrate.
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