| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which an IGBT region and a diode region are formed on the same semiconductor substrate, wherein a trench gate is highly integrated while ensuring a large curvature radius of a bend of the trench gate formed on the IGBT region. SOLUTION: The diode region is formed on a region inside the IGBT region in plan view of the semiconductor device. The IGBT region includes a trench gate having the bend, and the trench gate of the IGBT region is provided around the diode region. The IGBT region is formed on the periphery of the diode region, the trench gate can be highly integrated while ensuring a sufficiently large curvature radius of the bend of the trench gate around the diode region. COPYRIGHT: (C)2011,JPO&INPIT |
