| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device capable of shortening the test period, and to provide a test method of the same. <P>SOLUTION: The nonvolatile semiconductor memory device is equipped with: first and second memory cell arrays; flag registers which are prepared corresponding to respective blocks and capable of writing flag data by selecting block address; a control circuit for reading out the flag data of the first memory cell array and second memory cell array by arranging them in parallel; a first counter register for holding counted results of the flag data in the first memory cell array; and a second counter register for holding counted results of the flag data in the second memory cell array. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
