| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide high quartz glass which has metal impurity diffusion-stopping ability and high temperature viscosity since conventional natural silica powder melting quartz glass which has been generally used for a semiconductor heat treatment jig does not have metal impurity especially copper diffusion stopping ability. <P>SOLUTION: The Si lone electron pair-containing concentration is made at most 0.5×10<SP>16</SP>pairs/cm<SP>3</SP>, and further the OH group containing concentration is made at most 50 wt.ppm by dissolving in an electric furnace or plasma dissolving high purity synthetic silica powder, and thus the quartz glass having metal impurity diffusion-stopping ability and a high coefficient of viscosity in semiconductor heat treatment is obtained. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
