| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface emitting laser element reducing an element resistance while allowing a single transverse mode operation with a high output. SOLUTION: A lower semiconductor DBR 103, a resonator structure including an active layer 105, an upper semiconductor DBR 107 and a contact layer 109 are laminated on a substrate 101. A p-side electrode 113 is provided to surround an emitting region on an emitting surface. A mode filter 115, which is a transparent dielectric film provided to surround the center of the emitting region, is formed within the emitting region with an optical thickness ofλ/4. An outer shape of a part of the p-side electrode 113 in contact with the contact layer 109 is a shape including corners. In this case, a contact area between the p-side electrode 113 and the contact layer 109 can be increased without increasing a size of a mesa. COPYRIGHT: (C)2011,JPO&INPIT
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