| 摘要 |
A method of fabricating a photo sensor includes the following steps. First, a substrate is provided, having a conductive layer, a buffer dielectric layer, a patterned semiconductor layer, a dielectric layer, and a planarization layer disposed thereon from bottom to top, wherein the patterned semiconductor layer comprises a first doped region, an intrinsic region, and a second doped region disposed in order. Then, the planarization layer is patterned to form an opening in the planarization layer to expose a portion of the dielectric layer, wherein the opening is positioned on the intrinsic region and portions of the first and the second doped regions. Thereafter, at least a patterned transparent conductive layer is formed in the opening, covering the boundary of the intrinsic region and the first doped region and the boundary of the intrinsic region and the second doped region.
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