| 摘要 |
<p>PURPOSE: A method for forming a photoresist pattern is provided to improve process margin of a main pattern through a first exposure process using a first mask pattern and a second exposure process using a second mask pattern. CONSTITUTION: A photoresist is formed on a wafer(S410). The photoresist is firstly exposed by using a first mask with a first mask pattern(S420). A first mask pattern includes light shielding main patterns and light shielding scattering bars. The firstly exposed photoresist is secondly exposed by using a second mask with a second mask pattern(S430). The second mask pattern has floodlight scattering bars on the same region as the light shielding scattering bars. The firstly and secondly exposed photoresist is developed(S440).</p> |
