| 摘要 |
<p>PURPOSE: A lateral double diffused metal oxide semiconductor is provided to obtain high BV(Breakdown Voltage) in a high n type drift region by having a super junction structure in the n-type drift region and a p-type drift region through a junction depletion. CONSTITUTION: In a lateral double diffused metal oxide semiconductor, a conductive drift region(105) is formed in a semiconductor substrate. A second conductive body area(107) is spaced from a first conductive drift region by a certain interval. The source area(113) of the first conductive type is formed within the body region of the second conductive type. The drain region(109) of the first conductive type is formed within the drift region of the first conductive type. A field insulating layer(119) and the active region are formed in the first conductive drift region alternately.</p> |
