| 摘要 |
PURPOSE: A semiconductor memory device and a reading method thereof are provided to change a reading voltage of memory cells according to whether adjacent memory cells are programmed, thereby reading normal data even though a threshold voltage increases. CONSTITUTION: First and second latches are initialized(T02). Data of cells adjacent to cells to be read are read and stored in the first latch(T03). The data stored in the first latch are transferred to the second latch of an adjacent page buffer(T04). A reading voltage of a cell to be read according to a value of data stored in the first and second latches is set. A cell to be read is read using the reading voltage(T09). Selected cells are read by a third latch.
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