| 摘要 |
PURPOSE: A method for manufacturing a phase change memory device is provided to increase current density by minimizing the area of the phase change layer in contact with a bottom electrode. CONSTITUTION: A first insulation layer(110) is formed on a semiconductor substrate. A bottom electrode(112a) is formed in the first insulation layer. A second insulation layer(114) with an opening to expose the bottom electrode is formed on the first insulation layer. A spacer(116a) is formed on the sidewall of the opening. A phase change layer(118) in contact with the spacer is formed between spacers.
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