| 摘要 |
PURPOSE: A nonvolatile memory device is provided to control an amount of currents of a write driving unit by sensing the voltage transition time of a MTJ(Magnetic Tunnel Junction Element). CONSTITUTION: A memory cell reads and writes data in a magnetic resistance device according to a write current applied to a bit line and a source line. A voltage detecting unit(110) detects the voltage of a bit line and a source line. A write current control unit(120) controls the activation of a write control signal according to the output of the voltage detecting unit. A write driving unit(WD1,WD2) controls an amount of write currents supplied to the memory cell according to the activation of the write control signal. The memory cell includes an MTJ device and a switching device. The switching device is connected between the MTJ device and the source line and a gate is connected to a word line.
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