| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device without need to provide a shield line between main bit lines. <P>SOLUTION: The nonvolatile semiconductor memory device includes a plurality of local bit lines connected to a memory cell, a plurality of main bit lines connected to a local bit line selected from the plurality of local bit lines, a selection gate for selecting two main bit lines from the plurality of main bit lines, a sense amplifier connected to the two main bit lines selected by the selection gate, and a reference cell connected to one of the two main bit lines. The selection gate selects the two main bit lines in a manner as to sandwich a non-selected main bit line between the two main bit lines. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
