| 摘要 |
PROBLEM TO BE SOLVED: To evaluate a crystal defect highly accurately without cleaning a semiconductor substrate surface, in evaluation of the crystal defect in the semiconductor substrate using cathode luminescence. SOLUTION: This defect inspection device 100 includes a stage 3 for supporting the semiconductor substrate 2, an electron beam irradiation part 7, a CL detector 14, an X-ray detector 19 and a data processing part 22. The electron beam irradiation part 7 irradiates the semiconductor substrate 2 with an electron beam. The CL detector 14 detects cathode luminescence light generated from the crystal defect at an inspection spot by irradiating the inspection spot of the semiconductor substrate 2 with the electron beam. The X-ray detector 19 detects a characteristic X-ray of carbon generated from an organic compound adhering to the surface of the inspection spot by irradiating the inspection spot with the electron beam. The data processing part 22 corrects attenuation by the organic compound of the detected cathode luminescence light based on the intensity of the detected characteristic X-ray of carbon. COPYRIGHT: (C)2011,JPO&INPIT
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