发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE |
摘要 |
A first silicon carbide substrate having a first back-side surface and a second silicon carbide substrate having a second back-side surface are prepared. The first and second silicon carbide substrates are placed so as to expose each of the first and second back-side surfaces in one direction. A connecting portion is formed to connect the first and second back-side surfaces to each other. The step of forming the connecting portion includes a step of forming a growth layer made of silicon carbide on each of the first and second back-side surfaces, using a sublimation method of supplying a sublimate thereto in the one direction.
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申请公布号 |
US2011165764(A1) |
申请公布日期 |
2011.07.07 |
申请号 |
US201013062057 |
申请日期 |
2010.04.27 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
SASAKI MAKOTO;HARADA SHIN;NISHIGUCHI TARO;FUJIWARA SHINSUKE;NAMIKAWA YASUO |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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