| 摘要 |
<p>PURPOSE: A method for manufacturing a LDMOS(Lateral Double Diffused Metal Oxide Semiconductor) transistor is provided to improve a withstand voltage property and a current property of a transistor by forming an air gap in an N type deep well using SON technology. CONSTITUTION: A first conductive deep well and a second conductive body region are formed by implanting impurity ions in a semiconductor substrate. A plurality of trenches with a thin linewidth are formed on the first conductive deep well. An air gap is formed on the region with a trench in the first conductive deep well by thermally processing the semiconductor substrate. An insulation oxide layer(18) is formed on the surface of the first conductive deep well of the semiconductor substrate. A gate electrode(21) is formed on the semiconductor substrate. A first conductive source region and a first conductive drain region are formed on the first conductive deep well and the second conductive body region by using the gate electrode and the insulation oxide layer as an ion implantation mask.</p> |
