| 摘要 |
PURPOSE: An apparatus for metal organic chemical vapor deposition is provided to reduce a process time by transferring a substrate to other reaction chamber during cleaning one without interruption. CONSTITUTION: In a apparatus for metal organic chemical vapor deposition, a gas supply unit(400) separates a first gas supply unit(410) and a second gas supply unit(420). A power supply unit(500) supplies power to a reaction chamber or a buffer chamber. Controllers(610,620) control the reaction chamber, the buffer chamber, the gas supply unit, and the power supply unit. A fourth reaction chamber(140), a fifth reaction chamber(150), and sixth reaction chamber(160) makes a GaN buffer layer grown at the same time. A cooling process is performed in a third reaction chamber.
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