| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent a leakage current due to a butting contact by preventing a space loss. CONSTITUTION: A gate is formed on a semiconductor substrate(210). A source/drain(230) is formed on a semiconductor substrate near the gate. A spacer(225) is formed on the sidewall of the gate. An interlayer dielectric layer(240) is formed on the semiconductor substrate with the spacer. A photoresist pattern with two openings is formed on a butting contact area. A butting contact hole is formed to expose a part of the source/drain area and a stack gate(220) by etching the interlayer dielectric layer using the photoresist pattern as a mask. A butting contact is formed to bridge the source/drain area and the upper side of the stack gate by filling the butting contact hole with metal materials.
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