| 摘要 |
PURPOSE: A method for manufacturing a semiconductor memory device is provided to improve the reliability of the semiconductor memory device by forming a pattern to suppress the deterioration of the electric property of the semiconductor memory device. CONSTITUTION: An etching target layer(102) and a sub pattern are formed on a semiconductor substrate(100). A spacer(110a) is formed on the sidewall of the sub pattern. The sub pattern is removed. Both edges of the spacer become symmetrical by an etching process. The etching target layer is patterned by using the spacer.
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