发明名称 |
ASYMMETRIC FET INCLUDING SLOPED THRESHOLD VOLTAGE ADJUSTING MATERIAL LAYER AND METHOD OF FABRICATING SAME |
摘要 |
A semiconductor structure is provided that includes at least one asymmetric gate stack located on a surface of a semiconductor structure. The at least one asymmetric gate stack includes, from bottom to top, a high k gate dielectric, a sloped threshold voltage adjusting material layer and a gate conductor. A method of forming such a semiconductor structure is also provided in which a line of sight deposition process is used in forming the sloped threshold voltage adjusting material layer in which the deposition is tilted within respect to a horizontal surface of a semiconductor structure.
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申请公布号 |
US2011163385(A1) |
申请公布日期 |
2011.07.07 |
申请号 |
US20100683602 |
申请日期 |
2010.01.07 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHIDAMBARRAO DURESETI;FANG SUNFEI;LIANG YUE;YU XIAOJUN;YUAN JUN |
分类号 |
H01L27/092;H01L21/28;H01L27/088;H01L29/78 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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