ELECTROLESS PLATING A NICKLE LAYER AND A GOLD LAYER IN A SEMICONDUCTOR DEVICE

摘要

A method and resulting device for maintaining non-porous nickel layer at a nickel/passivation interface of a semiconductor device in a nickel/gold electroless plating process. The method can include determining a thickness of a gold layer of the semiconductor device; determining an electroless plating rate and plating time of the gold layer to reach the determined thickness; determining a thickness of nickel under the gold layer to maintain the non-porous nickel layer at the nickel/passivation interface at a termination of an electroless gold plating process; and following the determinations, sequentially electroless plating of each of the nickel layer and gold layer on the device layer to the determined thicknesses.