发明名称 RADIATION DETECTOR
摘要 A radiation detector of this invention has a curable synthetic resin film covering exposed surfaces of a radiation sensitive semiconductor layer, a carrier selective high resistance film and a common electrode, in which a material allowing no chloride to mix in is used in a manufacturing process of the curable synthetic resin film. This prevents pinholes and voids from being formed by chlorine ions in the carrier selective high resistance film and semiconductor layer. Also a protective film which does not transmit ionic materials may be provided between the exposed surface of the common electrode and the curable synthetic resin film, thereby to prevent the carrier selective high resistance film from being corroded by chlorine ions included in the curable synthetic resin film, and to prevent an increase of dark current flowing through the semiconductor layer.
申请公布号 US2011163306(A1) 申请公布日期 2011.07.07
申请号 US200813063061 申请日期 2008.09.10
申请人 FURUI SHINGO;YOSHIMUTA TOSHINORI;SUZUKI JUNICHI;WATADANI KOJI;MORITA SATORU 发明人 FURUI SHINGO;YOSHIMUTA TOSHINORI;SUZUKI JUNICHI;WATADANI KOJI;MORITA SATORU
分类号 H01L31/0272 主分类号 H01L31/0272
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