发明名称 |
SOS SUBSTRATE WITH REDUCED STRESS |
摘要 |
Provided is a silicon-on-sapphire (SOS) substrate with reduced stress. The disclosed SOS substrate has a monocrystalline silicon thin film laminated on a sapphire substrate. The stress of the silicon film of the SOS substrate is at most 2.5×108 Pa across the entire surface when measured according to the Raman shift method. |
申请公布号 |
WO2011081146(A1) |
申请公布日期 |
2011.07.07 |
申请号 |
WO2010JP73590 |
申请日期 |
2010.12.27 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD.;AKIYAMA, SHOJI |
发明人 |
AKIYAMA, SHOJI |
分类号 |
H01L27/12;H01L21/02;H01L21/336;H01L29/786 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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