| 摘要 |
<p>PURPOSE: A method manufacturing of a flash memory device is provided to prevent the residue of a polysilicon film from remaining on the both side wall of a lower polysilicon film in etching by forming an upper silicon film on the gate insulating layer to be relatively smaller than the lower polysilicon film. CONSTITUTION: In a method manufacturing of a flash memory device, an element isolation film(14) is formed in a semiconductor substrate(10) in which a first conductive well(11) and a second conductive well(12). A lower polysilicon layer(16) is formed on the semiconductor substrate. A sidewall(20) is formed in the both sidewall of the lower polysilicon layer. A gate insulating layer(18) is formed on the lower polysilicon layer. The upper polysilicon film(22) is formed on the gate insulating layer.</p> |
