| 摘要 |
<p>PURPOSE: A method for forming the fine pattern of a semiconductor device is provided to prevent the deterioration of a profile property due to the footing of a second photo resist pattern and improve the uniformity of a second photo resist pattern. CONSTITUTION: A first photo resist film is formed on an etched layer. A first photo resist pattern is formed by patterning the first photo resist film. A DBARC(Developable Bottom Anti-Reflective Coating) film is formed on a substrate(10) with the first photo resist pattern. A second photo resist film is formed on the upper side of the DBARC layer. A second photo resist pattern and a DBARC pattern are formed by patterning the DBARC film and the second photo resist film. The layer is etched by using the first photo resist pattern and the second photo resist pattern as an etching mask. The first photo resist pattern, the second photo resist pattern, and the DBARC pattern are removed.</p> |
