METHOD FOR MANUFACTURING DAMASCENE BITLINE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

摘要

PURPOSE: A method for manufacturing a damascene bit line and a method for manufacturing a semiconductor device are provided to prevent the deterioration of an insulation layer due to fluorine by using metal organic gas without the fluorine in a tungsten nitride layer depositing process. CONSTITUTION: A damascene pattern(22) is formed. A dual tungsten nitride layer(24A,25A) is formed on the damascene pattern. The tungsten nitride layers have different nitrogen concentration. A bulk tungsten layer(26A) is formed on the tungsten nitride layer. The bulk tungsten layer buries the damascene pattern.