| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device including a buried gate is provided to prevent the attack of an active area by applying the trimming process of a hard mask. CONSTITUTION: An etch barrier layer pattern is formed on a semiconductor substrate(21). A trench(24) is formed by etching the semiconductor substrate using the etch barrier layer pattern. A gate insulation layer(27) is formed by oxidizing the surface of the trench. A conductive layer is formed on the gate insulation layer to gap-fill the trench. A buried gate(28A) is formed by etching back the conductive layer.
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