| 摘要 |
PURPOSE: A method for forming a device isolation layer is provided to improve the yield of a semiconductor device by removing residue after a planarization process. CONSTITUTION: A pad insulating film(202) is formed on a semiconductor substrate(200). A device isolation area is formed by partially etching the pad insulating film and the semiconductor substrate. An isolation film for a device isolation is buried in the device isolation area. A device isolation layer(204) is formed by a planarization process to expose the upper side of the etched pad isolating film. A moat pattern is formed in the area except for the device isolation layer. The residue is removed through a dry etching process using the moat pattern as an etching mask after the planarization process.
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