发明名称 FLASH MEMORY APPARATUS AND SOLID STATE STORAGE SYSTEM USING THE SAME
摘要 PURPOSE: A flash memory apparatus and a solid state storage system using the same are provided to control the threshold voltage of a flash memory cell by a desired level to enable a cell to be normally operated when trap charge increases due to the increase of a cycling time. CONSTITUTION: In a flash memory apparatus and a solid state storage system using the same, a flash memory(130) comprises a plurality of memory blocks A temperature compensation stage(140) heats and cools down the flash memory. The temperature compensation stage comprises a temperature controller(142) and a temperature control device(144) A temperature controller drives the temperature control device which heats or cools down the flash memory.
申请公布号 KR20110075333(A) 申请公布日期 2011.07.06
申请号 KR20090131757 申请日期 2009.12.28
申请人 HYNIX SEMICONDUCTOR INC.;PAXDISK CO., LTD. 发明人 SHIN, YOUNG KYUN;YI, DAE HEE;KIM, JONG GAH
分类号 G11C16/06;G11C7/04;G11C16/34 主分类号 G11C16/06
代理机构 代理人
主权项
地址