发明名称 |
FLASH MEMORY APPARATUS AND SOLID STATE STORAGE SYSTEM USING THE SAME |
摘要 |
PURPOSE: A flash memory apparatus and a solid state storage system using the same are provided to control the threshold voltage of a flash memory cell by a desired level to enable a cell to be normally operated when trap charge increases due to the increase of a cycling time. CONSTITUTION: In a flash memory apparatus and a solid state storage system using the same, a flash memory(130) comprises a plurality of memory blocks A temperature compensation stage(140) heats and cools down the flash memory. The temperature compensation stage comprises a temperature controller(142) and a temperature control device(144) A temperature controller drives the temperature control device which heats or cools down the flash memory. |
申请公布号 |
KR20110075333(A) |
申请公布日期 |
2011.07.06 |
申请号 |
KR20090131757 |
申请日期 |
2009.12.28 |
申请人 |
HYNIX SEMICONDUCTOR INC.;PAXDISK CO., LTD. |
发明人 |
SHIN, YOUNG KYUN;YI, DAE HEE;KIM, JONG GAH |
分类号 |
G11C16/06;G11C7/04;G11C16/34 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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