| 摘要 |
PURPOSE: A semiconductor memory device is provided to prevent data skew by allowing a first half bank and a third half bank to have same data transmission distance from an input/output pad. CONSTITUTION: A byte control signal generator(BC1~BC4) outputs first to fourth byte control signals. The byte control signal controls the number of a data input/output. A first data driving part(100) controls data transmission between an input output pad and a first half bank(10). A second data driving part(200) controls data transmission between the input output pad and a second half bank(20). A mode combination signal generator generates first to four mode signal. An address decoding signal generator generates first to fourth address decoding signals. A signal output unit generates first to fourth byte control signal. |
