| 发明名称 |
CHEMICAL MECHANICAL POLISHING (CMP) POLISHING SOLUTION WITH ENHANCED PERFORMANCE |
| 摘要 |
This invention relates to a chemical composition for chemical mechanical polishing (CMP) of substrates that are widely used in the semiconductor industry. The inventive chemical composition contains additives that are capable of improving consistency of the polishing performance and extending the lifetime of a polishing pad. |
| 申请公布号 |
KR20110076927(A) |
申请公布日期 |
2011.07.06 |
| 申请号 |
KR20117008552 |
申请日期 |
2009.09.29 |
| 申请人 |
BASF SE |
发明人 |
LI YUZHUO;PINDER HARVEY WAYNE;VENKATARAMAN SHYAM S. |
| 分类号 |
C09K3/14;H01L21/304 |
主分类号 |
C09K3/14 |
| 代理机构 |
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代理人 |
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| 主权项 |
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