The inventive semiconductor white light source comprises a semiconductor radiating crystal (1) which is based on a multicomponent Al-In-Ga-N system and generates the light in the blue-violet spectral range, and a coating containing a phosphor (5) which absorbs a part of light emitted by the crystal and gives off light in the yellow spectral range. An oxonitride alpha -sialon material activated with a divalent europium is used in the form of a phosphor.
申请公布号
EP1560273(B1)
申请公布日期
2011.07.06
申请号
EP20030774413
申请日期
2003.10.23
申请人
"SVETLANA-OPTOELEKTRONIKA"
发明人
ITKINSON, GRIGORY VLADIMIROVICH;ZAKGEIM, ALEKSANDR LVOVICH;VASILIEVA, ELENA DMITRIEVNA;CHERNOVETS, BORIS VASILIEVICH;GREKOV, FEDOR FEDOROVICH;BOGDANOV, ALEKSANDR ALEKSANDROVICH