| 摘要 |
<p>PURPOSE: An optical proximity correcting method with respect to a pattern including a layout to an oblique direction is provided to reduce time required for manufacturing a mask by eliminating a layout to the oblique direction and forming patterns to a vertical direction or a horizontal direction. CONSTITUTION: An original layout composed of patterns is designed(S200). A first pattern and a third pattern are arranged to a vertical direction. A second pattern is arranged in an oblique pattern and connects the first pattern and the third pattern. The second pattern is slanted with respect to the vertical axis with a pre-set angle. The second pattern is eliminated to correct the original layout(S210). The corrected layout is verified(S220).</p> |
